Si8610/20/21/22
Table 6. Insulation and Safety-Related Specifications
Value
Parameter
Symbol
Test Condition
WB
NB
Unit
SOIC-16
SOIC-8
Nominal Air Gap (Clearance) 1
Nominal External Tracking (Creepage) 1
Minimum Internal Gap (Internal Clearance)
L(IO1)
L(IO2)
8.0
8.0
0.014
4.9
4.01
0.014
mm
mm
mm
Tracking Resistance
(Proof Tracking Index)
Erosion Depth
PTI
ED
IEC60112
600
0.019
600
0.040
V RMS
mm
Resistance
(Input-Output) 2
R IO
10 12
10 12
?
Capacitance (Input-Output) 2
C IO
f = 1 MHz
2.0
2.0
pF
Input
Capacitance 3
C I
4.0
4.0
pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in “7. Package Outline:
16-Pin Wide Body SOIC”, “9. Package Outline: 8-Pin Narrow Body SOIC”. VDE certifies the clearance and creepage
limits as 8.5 mm minimum for the WB SOIC-16 package and 4.7 mm minimum for the NB SOIC-8 package. UL does
not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance and
creepage limits as 3.9 mm minimum for the NB SOIC-8 and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si86xx is converted into a 2-terminal device. Pins 1–8 (1–4, NB SOIC-8)
are shorted together to form the first terminal and pins 9–16 (5–8, NB SOIC-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3. Measured from input pin to ground.
Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Test Conditions
Specification
NB SOIC-8 WB SOIC-16
Basic Isolation Group
Installation Classification
18
Material Group
Rated Mains Voltages < 150 V RMS
Rated Mains Voltages < 300 V RMS
Rated Mains Voltages < 400 V RMS
Rated Mains Voltages < 600 V RMS
Rev. 1.4
I
I-IV
I-III
I-II
I-II
I
I-IV
I-IV
I-III
I-III
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